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Effects of Radiation on Semiconductors [Paperback]

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  • Category: Books (Science)
  • Author:  Vavilov, Viktor S.
  • Author:  Vavilov, Viktor S.
  • ISBN-10:  1489927220
  • ISBN-10:  1489927220
  • ISBN-13:  9781489927224
  • ISBN-13:  9781489927224
  • Publisher:  Springer
  • Publisher:  Springer
  • Binding:  Paperback
  • Binding:  Paperback
  • Pub Date:  01-Mar-2013
  • Pub Date:  01-Mar-2013
  • SKU:  1489927220-11-SPRI
  • SKU:  1489927220-11-SPRI
  • Item ID: 100765382
  • List Price: $54.99
  • Seller: ShopSpell
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  • Delivery by: Nov 25 to Nov 27
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The effects of electromagnetic radiation and high-energy par? ticles on semiconductors can be divided into two main processes: (a) the excitation of electrons (the special case is internal ioniza? tion, i. e. , the generation of excess charge carriers); and(b) dis? turbance of the periodic structure of the crystal, i. e. , the forma? tion of structural radiation defects. Naturally, investigations of the effects of radiation on semiconductors cannot be considered in isolation. Thus, for example, the problern of radiation de? fects is part of the generalproblern of crystal lattice defects and the influence of such defects on the processes occurring in semi? conductors. The same is true of photoelectric and similar phe? nomena where the action of the radiation is only the start of a complex chain of nonequilibrium electronprocesses. Nevertheless, particularly from the point of view of the experimental physicist, the radiation effects discussed in the present book have inter? esting features: several types of radiation may produce the same resul t (for example, ionization by photons and by charged particles) or one type of radiation may produce several effects (ionization and radiation -defect formation). The aim of the author was to consider the most typical prob? lems. The subjects discussed differ widely from one another in the extent to which they have been investigated.The effects of electromagnetic radiation and high-energy par? ticles on semiconductors can be divided into two main processes: (a) the excitation of electrons (the special case is internal ioniza? tion, i. e. , the generation of excess charge carriers); and(b) dis? turbance of the periodic structure of the crystal, i. e. , the forma? tion of structural radiation defects. Naturally, investigations of the effects of radiation on semiconductors cannot be considered in isolation. Thus, for example, the problern of radiation de? fects is part of the generalproblern of crystal lattice defects andló&

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