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1. Introduction.- 2. Hydrogen Incorporation in Crystalline Semiconductors.- 2.1 Techniques for Hydrogen Incorporation in Semiconductors.- 2.1.1 Hydrogen Plasma Exposure.- 2.1.2 Hydrogen Implantation.- 2.2 Survey of the Configurations of Hydrogen in Semiconductors.- 2.2.1 Silicon.- 2.2.2 Germanium.- 2.2.3 Gallium-Arsenide and Other Compound Semiconductors.- 3. Passivation of Deep Levels by Hydrogen.- 3.1 Deep-Level Passivation in Silicon.- 3.1.1 Metallic Impurities.- 3.1.2 Chalcogenides.- 3.1.3 Oxygen-Related Thermal Donors.- 3.1.4 Process-Related Defects.- 3.1.5 Crystalline Defects.- 3.1.6 Thermal Stability of Passivation.- 3.1.7 Prehydrogenation.- 3.1.8 Models for Deep-Level Passivation.- 3.2 Passivation of Defects in Gallium Arsenide.- 3.3 Aluminum Gallium Arsenide.- 3.4 Gallium Phosphide.- 3.5 CdHgTe, Zn3P2.- 3.6 Germanium.- 4. Shallow Impurity Passivation by Atomic Hydrogen.- 4.1 Silicon.- 4.1.1 Silicon Acceptors.- 4.1.2 Donors.- 4.2 Gallium Arsenide.- 4.2.1 Donors.- 4.2.2 Charge States.- 4.2.3 Acceptors.- 4.3 AlGaAs.- 4.4 CdTe and ZnTe.- 4.5 Gallium Phosphide.- 4.6 Germanium.- 4.7 Indium Phosphide.- 4.8 BN and BP.- 4.9 Correlation with Muonium.- 5. Microscopic Properties of Hydrogen-Related Complexes in Silicon from Vibrational Spectroscopy.- 5.1 Vibrational Spectroscopy of H-Related Complexes.- 5.1.1 Local Vibrational Modes.- 5.1.2 H-Stretching Vibrations of the Acceptor-H Complexes.- 5.1.3 Local Mode of the B-H Complex and the Effect of B Isotopic Substitutions.- 5.1.4 Vibrational Spectroscopy of Donor-H Complexes in Silicon.- 5.1.5 IR Studies of Lattice Defects Decorated with Hydrogen.- 5.2 Uniaxial Stress Studies of H-Related Complexes.- 5.2.1 Uniaxial Stress and Defect Symmetry.- 5.2.2 Vibrational Spectra of the B-H Complex Under Stress.- 5.2.3 Stress Studies of Donor-H Complexes.- 5.2.4 Uniaxial Stress Studies of Proton-Implanted Silicon.- 5.3 Hydrogen Motion in the B-H Complex.- 5.3.1 Kinetics of Defect Motion.- 5.3.2 IR Studies of the Reorientation of tlW
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