Carrier Transport in Nanoscale MOS Transistors [Hardcover]

A comprehensive advanced level examination of the transport theory of nanoscale devices

• Provides advanced level material of electron transport in nanoscale devices from basic principles of quantum mechanics through to advanced theory and various numerical techniques for electron transport
• Combines several up-to-date theoretical and numerical approaches in a unified manner, such as Wigner-Boltzmann equation, the recent progress of carrier transport research for nanoscale MOS transistors, and quantum correction approximations
• The authors approach the subject in a logical and systematic way, reflecting their extensive teaching and research backgrounds

Preface ix

Acknowledgements xi

1 Emerging Technologies 1

1.1 Moore's Law and the Power Crisis 1

1.2 Novel Device Architectures 2

1.3 High Mobility Channel Materials 5

1.4 Two?-Dimensional (2?-D) Materials 7

1.5 Atomistic Modeling 8

2 First?-principles calculations for Si nanostructures 12

2.1 Band structure calculations 12

2.1.1 Si ultrathin?-body structures 12

2.1.2 Si nanowires 17

2.1.3 Strain effects on band structures: From bulk to nanowire 20

2.2 Tunneling current calculations through Si/SiO2/Si structures 31

2.2.1 Atomic models of Si (001)/SiO2 /Si (001) structures 32

2.2.2 Current?-voltage characteristics 33

2.2.3 SiO2 thickness dependences 35

3 Quasi?-ballistic Transport in Si Nanoscale MOSFETs 41

3.1 A picture of quasi?-ballistic transport simulated using quantum?-corrected Monte Carlo simulation 41

3.1.1 Device structure and simulation method 42&ll—