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Polycrystalline Semiconductors: Grain Boundaries and Interfaces [Paperback]

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  • Category: Books (Technology &Amp; Engineering)
  • ISBN-10:  3642934153
  • ISBN-10:  3642934153
  • ISBN-13:  9783642934155
  • ISBN-13:  9783642934155
  • Publisher:  Springer
  • Publisher:  Springer
  • Pages:  394
  • Pages:  394
  • Binding:  Paperback
  • Binding:  Paperback
  • Pub Date:  01-Feb-2014
  • Pub Date:  01-Feb-2014
  • SKU:  3642934153-11-SPRI
  • SKU:  3642934153-11-SPRI
  • Item ID: 100859010
  • List Price: $169.99
  • Seller: ShopSpell
  • Ships in: 5 business days
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  • Delivery by: Nov 25 to Nov 27
  • Notes: Brand New Book. Order Now.

I Grain Boundary Structure.- Intergranular Total Energy Maps and the Structure of a Grain Boundary.- Grain Boundary Structure Determination by HREM: A Comparison with Computer Relaxed Configurations for Pure Tilt in Germanium.- Multiple Structures of a [001] ? = 13 Tilt Grain Boundary in Germanium.- Computer Modelling of Grain Boundaries by Use of Interatomic Potentials.- Transmission of Dislocations with Non-common Burgers Vectors Through ? = 9 (12?2) Boundaries in Silicon and Germanium Observed by In Situ HVEM.- II Grain Boundary Chemistry and Electronic Properties.- High Resolution Electron Microscopy of the Structure and Chemistry of Grain Boundaries and Other Interfaces in Semiconductors.- Theoretical Studies of the Impurity Segregation and Electrical Properties of Polycrystalline Silicon by LCAO Electronic Theory.- Electronic Properties of ? = 25 Silicon Bicrystals by Deep Level Transient Spectroscopy.- The Influence of Structure and Impurity Precipitation on the Electrical Properties of the Grain Boundaries in Silicon: Copper Precipitation in the ? = 25 Boundary.- EBIC Contrast and Precipitation in ? = 13 and ? = 25 Annealed Silicon Bicrystals.- Electron Beam Induced Current Contrast and Transmission Electron Microscopy Analysis of Special Grain Boundaries in Silicon.- SEM-EBIC Investigations of the Electrical Activity of Grain Boundaries in Germanium.- III Segregation, Activation and Passivation.- Atomic-Level Imaging and Microanalysis of Grain Boundaries in Polycrystalline Semiconductors.- Investigation of the Cobalt Segregation at Grain Boundaries in Silicon.- On the Influence of the Cottrell Atmosphere on the Recombination Losses at Grain Boundaries in Polycrystalline Silicon.- Hydrogen Passivation of Grain Boundaries in Silicon Sheet Material.- Atomic Hydrogen Passivation Studies of Microcrystalline Phases in Ion-Implant Damaged Surface Layers of Silicon.- Hydrogen Injection and Migration in Silicon.- Analysis of the Polycrystalline Semiconducting Film l#K

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