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This up-to-date monograph provides a thorough review of the relevant data and properties of the transition-metal impurities generated during silicon-sample and device fabrication. The different mechanisms responsible for contamination are discussed, and a survey is given of their impact on device performance. The specific properties of the main and rare impurities in silicon are examined, as well as the detection methods and requirements in modern technology. This new edition includes important recent data and many new tables.Metal Impurities in Silicon-Device Fabrication treats the transition-metal impurities generated during the fabrication of silicon samples and devices. The different mechanisms responsible for contamination are discussed, and a survey is given of their impact on device performance. The specific properties of the main and rare impurities in silicon are examined, as well as the detection methods and requirements in modern technology. Finally, impurity gettering is studied along with modern techniques to determine the gettering efficiency. In all of these subjects, reliable and up-to-date data are presented. This monograph provides a thorough review of the results of recent scientific investigations, as well as the relevant data and properties of the various metal impurities in silicon. The new edition includes important recent data and a number of new tables.1. Introduction.- 2. Common Properties of Transition Metals.- 2.1 General Behavior.- 2.2 Contamination of Silicon Wafers.- 2.2.1 Solid Phase.- 2.2.2 Liquid Phase.- 2.2.3 Vapor Phase.- 2.3 Impact on Device Performance.- 2.3.1 Dissolved Transition Metals.- 2.3.2 Precipitated Transition Metals.- 3. Properties of Transition Metals in Silicon.- 3.1 Solubilities.- 3.2 Diffusivities.- 3.3 Dissolved Impurities.- 3.3.1 Point Defects.- 3.3.2 Complexes.- 3.4 Precipitated Metals.- 3.4.1 Volume Precipitates.- 3.4.2 Surface Precipitates - Haze.- 3.4.3 Haze Phenomena.- 4. Properties of thel“'
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