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Silicon Nanowire Transistors [Paperback]

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  • Category: Books (Technology &Amp; Engineering)
  • Author:  Bindal, Ahmet, Hamedi-Hagh, Sotoudeh
  • Author:  Bindal, Ahmet, Hamedi-Hagh, Sotoudeh
  • ISBN-10:  331980085X
  • ISBN-10:  331980085X
  • ISBN-13:  9783319800851
  • ISBN-13:  9783319800851
  • Publisher:  Springer
  • Publisher:  Springer
  • Binding:  Paperback
  • Binding:  Paperback
  • Pub Date:  01-Jan-2018
  • Pub Date:  01-Jan-2018
  • SKU:  331980085X-11-SPRI
  • SKU:  331980085X-11-SPRI
  • Item ID: 101359170
  • List Price: $99.00
  • Seller: ShopSpell
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  • Delivery by: Nov 25 to Nov 27
  • Notes: Brand New Book. Order Now.

This book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption.  The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits.  These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technologys true potential for the next generation VLSI.  Dual Work Function Silicon Nanowire MOS Transistors.- Single Work Function Silicon Nanowire MOS Transistors.- Spice Modeling For Analog and Digital Applications.- High-Speed Analog Applications.- Radio Frequency (RF) Applications.- SRAM Mega Cell Design for Digital Applications.- Field-Programmable-Gate-Array (FPGA).- Integrate-And-Fire Spiking (IFS) Neuron.- Direct Sequence Spread Spectrum (DSSS) Base-Band Transmitter.-

Ahmet Bindal received his M.S. and Ph.D. degrees inElectrical Engineering Department from the University of California, LosAngeles CA. His doctoral research was the material characterization andanalysis of HEMT GaAs transistors. During his graduate studies, he was aresearch associate and technical consultant for Hughes Aircraft Co. In 1988, hejoined the technical staff of IBM Research and Development Center in Fishkill,NY, where he worked as a device design and characterization engineer. Hedeveloped asymmetrical MOS transistors and ultra thin Silicon-On-Insulator (SOI)technologies for IBM. In 1993, he transferred to IBM in Rochester, MN, as asenior circuit design engineer to work on the floating-point unit for AS-400main frame processor. He continued his circuit design career at IntelCorporation in Santa Clara, CA, where he designed 16-bit packedlW